Transparent Phosphorus Doped ZnO Ohmic Contact to GaN Based LED
نویسندگان
چکیده
منابع مشابه
ZnO–GaN tunnel junction for transparent ohmic contacts to p-GaN
The fabrication procedure of transparent n+-ZnO–p-GaN ohmic junctions has been described. The influence of consecutive technological steps on the electrical, structural and electronic properties of the junction has been studied. The results indicate that the predeposition of Au nucleation film plays a crucial role for the final contact properties. The ohmic behaviour is explained in terms of fo...
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Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2...
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A new ohmic contact scheme for gallium nitride is presented. The use of Nitrideforming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, ...
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The effect of nanoscale Pt islands on the electrical characteristics of contacts to p-type gallium nitride (GaN) has been investigated to explore the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. An as-deposited Al contact to p-GaN with a net hole concentration of 3 × 10 cm−3 was rectifying. However, an Al contact with nanoscale Pt islands...
متن کاملHigh-transparency Ni/Au ohmic contact to p-type GaN
In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current– voltage (I – V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7310 V cm at an alloying temperature of 450 °C. I...
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ژورنال
عنوان ژورنال: Korean Journal of Materials Research
سال: 2009
ISSN: 1225-0562
DOI: 10.3740/mrsk.2009.19.8.417